Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]
- 19 May 1997
- journal article
- editorial
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20) , 2766-2767
- https://doi.org/10.1063/1.119266
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrixApplied Physics Letters, 1996
- Coherently strained InAs insertions in GaAs: do they form quantum wires and dots?Microelectronics Journal, 1995
- Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructuresPhysical Review B, 1995
- Optical spectroscopic studies of InAs layer transformation on GaAs surfacesPhysical Review B, 1994
- Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)Physical Review B, 1994