High-Field Hall Factor ofn−Geat 200 °K

The high-field Hall factor of $n$-type germanium at 200 °K has been theoretically calculated including the effect of carrier scattering into the minima and that of the magnetic field dependence of the carrier temperature and population in the different valleys. The results calculated with the optical-phonon deformation-potential constant $D_0=0.4\mathrm{}\times {10}^9$ eV ${\mathrm{cm}}^{-1\mathrm{}}$ differ widely from the experimental values. Good agreement between theory and experiment is obtained for values of $D_0$ lying within 1 × ${10}^9$ and 1.5 × ${10}^9$ eV ${\mathrm{cm}}^{-1\mathrm{}}$.