Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- 1 September 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (9)
- https://doi.org/10.1143/jjap.7.1021
Abstract
The vapor growth of silicon nitride film is studied thermodynamically for SiH4-NH3-H2 and SiCl4-NH3-H2 systems. By calculating the partial pressures of gaseous species involved in the reactions, the deposition rates of silicon nitride are determined. The theoretical results for SiH4-NH3-H2 system are compared with the experimental data obtained by Bean et al. and the agreements are found quite good, indicating that an equilibrium or at least a quasi-equilibrium is always established. However for SiCl4-NH3-H2 system the agreements are rather poor, suggesting the deviation from the quasi-equilibrium states or the existence of the complex chemical intermediates etc.Keywords
This publication has 4 references indexed in Scilit:
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- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967
- The Equilibrium Behavior of the Silicon-Hydrogen-Chlorine SystemIBM Journal of Research and Development, 1964
- Analysis of the Hydrogen Reduction of Silicon Tetrachloride Process on the Basis of a Quasi-Equilibrium ModelJournal of the Electrochemical Society, 1964