Properties of SmB6 Doped with Eu and Gd
- 1 March 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (3) , 904-905
- https://doi.org/10.1063/1.1659011
Abstract
SmB6 behaves as a nonmagnetic semiconductor at low temperatures. Gd‐ and Eu doped samples have been prepared. The paramagnetic behavior of the doped materials shows that Eu remains divalent and consequently it does not alter the low‐temperature electrical properties appreciably. Gd, on the other hand, increases the electrical conductivity and the paramagnetic behavior corresponds to the trivalent Gd ion. The paramagnetic susceptibility flattens out below 0.1°K indicating a magnetic ordering of the Eu samples in contrast to the pure SmB6.This publication has 4 references indexed in Scilit:
- Electronic Configuration of SmB6Journal of Applied Physics, 1970
- Simple Model for Semiconductor-Metal Transitions: Smand Transition-Metal OxidesPhysical Review Letters, 1969
- Configuration of Sm in SmB6Journal of Applied Physics, 1969
- Magnetic and Semiconducting Properties of SmPhysical Review Letters, 1969