Advances in large-area Si:H thin film modules
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1443-1448 vol.2
- https://doi.org/10.1109/pvsc.1990.111848
Abstract
Recent advances in processing large-area modules using thin-film Si:H (TFS) alloys have yielded an 8.4% aperture area efficiency and 33.2 W on a an unlaminated and unframed 0.4 m/sup 2/ module. Film uniformity and shunting are major impediments to the manufacture of large TFS modules. Large-area modules are more sensitive than small laboratory devices to debris and contamination that cause shunting. Several major sources of shunts have been identified and controlled. These include substrate contamination, laser patterning debris, and airborne particulates. It is pointed out that further improvements can advance module performance to 10% aperture efficiency and 38 W.Keywords
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