Electronic transport investigation of arsenic-implanted silicon. II. Annealing kinetics of defects
- 15 June 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 4840-4844
- https://doi.org/10.1063/1.343195
Abstract
A study of the effects of the annealing temperature and time on arsenic-implanted silicon films is reported. ac and dc Hall-effect measurements as a function of temperature and frequency have been employed to characterize arsenic-implanted silicon films. The method of spreading resistance has also been used, allowing measurement of the resistance of the implantation damage layer as a function of depth. These techniques allow one to probe the annihilation processes of damage layer defects as a function of annealing conditions (i.e., temperature and time). The activation energy of the recovery process of the ionic implantation damage, found to be about 0.6 eV, is attributed to a local reconstruction of the implanted layer.This publication has 11 references indexed in Scilit:
- Electronic transport investigation of arsenic-implanted silicon. I. Annealing influence on the transport coefficientsJournal of Applied Physics, 1989
- Electronic transport investigations on silicon damaged by arsenic ion implantationJournal of Applied Physics, 1986
- Formation of amorphous layers by ion implantationJournal of Applied Physics, 1985
- Kinetics of laser-induced solid phase epitaxy in amorphous silicon filmsJournal of Applied Physics, 1982
- Cell formation and interfacial instability in laser-annealed Si-In and Si-Sb alloysJournal of Applied Physics, 1982
- Displacement criterion for amorphization of silicon during ion implantationJournal of Applied Physics, 1981
- Flash lamp annealing of arsenic implanted siliconPhysica Status Solidi (a), 1981
- Secondary defects in phosphorus-implanted siliconApplied Physics Letters, 1973
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Broadening of Impurity Bands in Heavily Doped SemiconductorsPhysical Review B, 1965