Non-linear second harmonic generation in inhomogeneous semiconductors at low temperatures

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Abstract
This paper presents an analytical investigation of the generation of the second harmonic component in the current density in a non-degenerate semi-conductor due to an electric vector and gradient of electron density and/or temperature; ionized impurity scattering has been considered to be the sole mechanism of scattering. Using the expression obtained for the second harmonic component of the current density, expressions for the magnitude of the transmitted and reflected second harmonic component of the electric vector have been obtained when a plane-polarized electromagnetic wave is normally incident on a semiconducting slab with gradients of electron density and/or temperature. For a typical case of a germanium slab the amplitudes of reflected and transmitted second harmonic components are seen to be 13% and 68% respectively of that of the fundamental when an electromagnetic wave of amplitude 01 e.s.u. cm-1 is incident on it.