Carrier density dependence of Auger recombination
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11) , 1281-1284
- https://doi.org/10.1016/0038-1101(78)90193-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Auger recombination of electron-hole dropsSolid State Communications, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Phonon-assisted auger recombination in degenerate semiconductorsSolid State Communications, 1977
- Phonon-assisted auger recombination in semiconductorsPhysica Status Solidi (a), 1977
- Doping Dependence of Hole Lifetime in n-Type GaAsJournal of Applied Physics, 1971
- Auger recombination and impact ionization involving traps in semiconductorsProceedings of the Physical Society, 1964
- Recombination Processes in-Type Indium AntimonidePhysical Review B, 1959