Organic Field-Effect Transistors from Solution-Deposited Functionalized Acenes with Mobilities as High as 1 cm2/V·s
Top Cited Papers
- 19 March 2005
- journal article
- research article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 127 (14) , 4986-4987
- https://doi.org/10.1021/ja042353u
Abstract
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V·s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V·s.Keywords
This publication has 18 references indexed in Scilit:
- Organic thin film transistorsMaterials Today, 2004
- Stable, Crystalline Acenedithiophenes with up to Seven Linearly Fused RingsOrganic Letters, 2004
- Manufacturing and commercialization issues in organic electronicsJournal of Materials Research, 2004
- Kinetic Inhibitor of Hydrate CrystallizationJournal of the American Chemical Society, 2004
- High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect TransistorsJournal of the American Chemical Society, 2004
- High-Performance, Solution-Processed Organic Thin Film Transistors from a Novel Pentacene PrecursorJournal of the American Chemical Society, 2002
- High Field-Effect Mobility Oligofluorene Derivatives with High Environmental StabilityJournal of the American Chemical Society, 2001
- A Soluble Pentacene Precursor: Synthesis, Solid-State Conversion into Pentacene and Application in a Field-Effect TransistorAdvanced Materials, 1999
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- A Highly π-Stacked Organic Semiconductor for Thin Film Transistors Based on Fused ThiophenesJournal of the American Chemical Society, 1998