X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H–SiC substrates
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 179-182
- https://doi.org/10.1016/s0921-5107(98)00498-x
Abstract
No abstract availableKeywords
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- Determination of strain in epitaxial semiconductor layers by high-resolution X-ray diffractionJournal of Physics D: Applied Physics, 1993
- A high-resolution multiple-crystal multiple-reflection diffractometerJournal of Applied Crystallography, 1989