On the Physical Origins of the EL2 Center in GaAs

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Abstract
A model, based on the kinetic reaction equations and the analysis of electric field‐enhanced emission rates of DLTS spectra, for describing the physical origins of the EL2 center in is presented in this paper. It is shown that the EL2 center may be ascribed to two different types of native point defect: one level , consisting of the antisite defect,, or the antisite cluster, , is designated as the EL2a electron trap, and the other level , consisting of the antisite‐vacancy complex, , is designated as the EL2b electron trap. The potential well for the EL2a level determined from the DLTS spectra by taking into account the electric‐field‐enhanced electron emission rates was found to be a Coulombic potential well with double donor charge state.

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