The Retardation of Gallium Diffusion in Silicon
- 1 October 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (10) , 823-824
- https://doi.org/10.1143/jjap.4.823
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in SiliconJapanese Journal of Applied Physics, 1964
- Field-Enhanced Donor Diffusion in Degenerate Semiconductor LayersJournal of Applied Physics, 1961
- Formation of Junction Structures by Solid-State DiffusionProceedings of the IRE, 1958