The study of Si0.5Ge0.5 alloy implanted by high dose oxygen
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 691-696
- https://doi.org/10.1016/0168-583x(91)96259-n
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Oxygen ion implanted germanium — structural propertiesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- New trends in SIMOXNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- The role of implantation temperature and dose in the control of the microstructure of SIMOX structuresMicroelectronic Engineering, 1988
- High-temperature stability of Si/SiO2 interfaces and the influence of SiO flux on thermomigration of impurities in SiO2Applied Physics Letters, 1988
- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976