Modeling a heterogeneous metal/semiconductor interface: Ce on Si(111)

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Abstract
High-resolution synchrotron radiation photoemission studies of Ce deposited onto cleaved Si(111)-2×1 reveal heterogeneous growth which involves clustering, Ce/Si reaction to form silicide patches, lateral silicide growth, and finally Ce overlayer formation with surface segregated Si. Core-level line-shape analysis reveals three distinct Si local bonding configurations. The relative interface concentration of each Si species has been determined as a function of overlayer thickness, and a model for this interface is presented and discussed.