An analytical DC model for the modulation-doped field-effect transistor

1 September 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (9) , 1902-1910
https://doi.org/10.1109/T-ED.1987.23174

Abstract

A novel analytical dc model for the MODFET device is introduced. The model is based on the approximate equations obtained for the 2DEG charge density under the equilibrium and current conduction conditions. The electron charge mobility and velocity-electric field characteristics in the device channel are modeled using semi-empirical expressions in order to obtain the current-voltage drain characteristics that are related directly to the physical parameters of the device structure and its ambient temperature. The calculated current-voltage characteristics using the developed model compare well with the experimental results obtained for a low-noise microwave MODFET at different temperatures. It is believed that due to the model simplicity, it is suitable for implementation in the existing microwave CAD packages.

Keywords

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