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Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process
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Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process
Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process
JM
J. C. Marinace
J. C. Marinace
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1 July 1960
journal article
Published by
IBM
in
IBM Journal of Research and Development
Vol. 4
(3)
,
248-255
https://doi.org/10.1147/rd.43.0248
Abstract
No abstract available
Cited
Cited by 61 articles
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