Silicon epitaxial growth by rapid thermal processing chemical vapor deposition
- 1 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (18) , 1775-1777
- https://doi.org/10.1063/1.101288
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxially grown base transistor for high-speed operationIEEE Electron Device Letters, 1987
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingApplied Physics Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985