Growth Temperature Dependences of MOVPE InN on Sapphire Substrates
- 5 November 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 228 (1) , 5-8
- https://doi.org/10.1002/1521-3951(200111)228:1<5::aid-pssb5>3.0.co;2-e
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of High-Electron-Mobility InN by RF Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2001
- Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1999
- Characterization of MOVPE-grown InN layers on α-Al2O3 and GaAs substratesJournal of Crystal Growth, 1998
- Electron transport in wurtzite indium nitrideJournal of Applied Physics, 1998