Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
- 27 November 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (22) , 3233-3235
- https://doi.org/10.1063/1.114882
Abstract
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 μm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.Keywords
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