Microwave Oscillator Design from Load Cycle Optimisation, Application to MMIC GaAs Mesfet Oscillator
- 1 September 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 831-835
- https://doi.org/10.1109/euma.1994.337315
Abstract
A non linear microwave oscillator design and optimisation procedure, using the facilities of a commercial harmonic balance simulator, is presented. The oscillator is transformed to a reflection amplifier and the optimisation consists mainly of obtaining an optimal form of the intrinsic load cycle of the transistor used. This procedure is applied to the design of a monolithic microwave integrated oscillator. Simulations and experimental results are presented The oscillator exhibits a 11.8 GHz carrier frequency, with a 13.75 dBm output power and a single side band phase noise around -75 dBc/Hz at 100 kHz offset from the carrier.Keywords
This publication has 1 reference indexed in Scilit:
- A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1985