Analysis of photocurrents at the semiconductor—eletrolyte junction
- 1 May 1982
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 27 (5) , 607-614
- https://doi.org/10.1016/0013-4686(82)85048-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The Transport and Kinetics of Minority Carriers in Illuminated Semiconductor ElectrodesJournal of the Electrochemical Society, 1981
- Photocurrent conversion efficiency in a Schottky barrierJournal of Applied Physics, 1981
- Anodic photodissolution of GaP single crystal electrodes in aqueous mediaSolar Energy Materials, 1980
- Electrochemical Behavior of an Aqueous Electrolyte/I‐Doped ZnSe Junction in the Dark and under IlluminationJournal of the Electrochemical Society, 1979
- Current photoresponse of an electrolyte–zinc selenide junctionPhysica Status Solidi (a), 1979
- On the Influence of the Surface Pretreatment on the Photocurrent‐Voltage Characteristics and the Spectral Response of the n‐GaAs/Electrolyte InterfaceBerichte der Bunsengesellschaft für physikalische Chemie, 1979
- Photoanodic Behavior of n‐type Cadmium Sulfide in Acetonitrile Solutions Containing Iodide IonJournal of the Electrochemical Society, 1978
- The Rate of the Photoelectrochemical Generation of Hydrogen at p‐Type SemiconductorsJournal of the Electrochemical Society, 1977
- Theoretical analysis of the quantum photoelectric yield in Schottky diodesSolid-State Electronics, 1977
- Quantum yield of metal-semiconductor photodiodesJournal of Applied Physics, 1972