Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon
- 15 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (6) , 3885-3888
- https://doi.org/10.1103/physrevb.41.3885
Abstract
The existing discrepancy between theoretical models and experimental results for hydrogen-donor complexes in crystalline silicon is resolved using first-principles pseudopotential-density-functional calculations for the hydrogen-phosphorus pair. In the configuration which is the global energy minimum, H is located on the extension of a P-Si bond on the Si side, with the Si-H pair relaxing away from P by 0.6 Å, leaving the P atom threefold coordinated. The calculated stretching and wagging vibrational frequencies associated with this configuration are in accord with experiment.Keywords
This publication has 14 references indexed in Scilit:
- Hydrogen passivation of shallow acceptors and donors inc-Si: Comparisons and trendsPhysical Review B, 1989
- Si-P-H complexes in crystal silicon: A theoretical studyPhysical Review B, 1989
- Theory of hydrogen diffusion and reactions in crystalline siliconPhysical Review B, 1989
- Microscopic structure of the hydrogen-boron complex in crystalline siliconPhysical Review B, 1989
- Structure and properties of hydrogen-impurity pairs in elemental semiconductorsPhysical Review Letters, 1989
- Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitationsPhysical Review B, 1988
- Theory of hydrogen passivation of shallow-level dopants in crystalline siliconPhysical Review Letters, 1988
- Donor-hydrogen complexes in passivated siliconPhysical Review B, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986