Performance characteristics of strained layer InGaAs/GaAs broad area and ridge waveguide lasers

9 May 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (10) , 865-866
https://doi.org/10.1049/el:19910541

Abstract

Strained layer InGaAs/GaAs single quantum well lasers were fabricated by metal organic vapour phase epitaxy. A broad area threshold current density of 126 A/cm² as measured for the 1200 μm long devices. Low transparency current density and internal loss were deduced from the study of lasers with different cavity lengths and from using a logarithmic gain-current relation. Variation of the emission wavelength with the cavity length was demonstrated. From this wafer, low threshold ridge waveguide lasers emitting at 984 nm were fabricated that have a potential application as pump sources for erbium doped fibre amplifiers.

Keywords

STRAINED LAYER LASERS
CAVITY LENGTHS
ER3+-DOPED FIBRE AMPLIFIERS III-V SEMICONDUCTORS
CURRENT DENSITY
984 NM
EMISSION WAVELENGTH
SINGLE QUANTUM WELL LASERS
INTERNAL LOSS
METAL ORGANIC VAPOUR PHASE EPITAXY
BROAD AREA THRESHOLD CURRENT DENSITY
TRANSPARENCY
PUMP SOURCES
INGAAS-GAAS
LOGARITHMIC GAIN-CURRENT RELATION
RIDGE WAVEGUIDE LASERS

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