BaTiO3 Films for Silicon-on-Insulator Structure
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S)
- https://doi.org/10.1143/jjap.32.4179
Abstract
The physical properties of BaTiO3 films deposited onto (100)-oriented silicon wafers at a low substrate temperature of 350°C for fabricating silicon-on-insulator (SOI) structures are described. These films were prepared by rf planar magnetron sputtering using a target of BaTiO3 ceramic. These films did not exhibit ferroelectricity, and the dielectric constant εs and the dissipation factor tan δ were about 100 and 0.013, respectively. These films showed a breakdown field larger than 1×106 V/cm and were excellent insulators. Thin-film transistors were fabricated using a silicon film deposited onto the BaTiO3 film. The field effect mobility of 34 cm2/Vs was obtained.Keywords
This publication has 1 reference indexed in Scilit:
- The Epitaxial Vapor Deposition of Perovskite MaterialsJournal of the Electrochemical Society, 1963