Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers

11 September 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (19) , 992-993
https://doi.org/10.1049/el:19860678

Abstract

GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density J_th for these double heterostructures was a factor of two lower than reported previously; CW operation was achieved up to 235 K.

Keywords

THRESHOLD CURRENT DENSITY
GAINASSB/ALGAASSB INJECTION LASERS
ELECTRICAL CONFINEMENT
CONTINUOUS WAVE OPERATION
GAINASSB-ALGAASSB
OPTICAL CONFINEMENT
III-V SEMICONDUCTOR
CLADDING LAYERS
INJECTION LASERS
DOUBLE HETEROSTRUCTURES