High-input-power-allowable uni-travelling-carrierwaveguide photodiodes with semi-insulating-InP buriedstructure
- 5 August 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (16) , 1377-1379
- https://doi.org/10.1049/el:19990961
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InPJapanese Journal of Applied Physics, 1998
- High-output-voltage, high speed, high efficiencyuni-travelling-carrier waveguide photodiodeElectronics Letters, 1998