The single crystal growth and electrical properties of cobalt-doped indium phosphide
- 1 November 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (2) , 263-267
- https://doi.org/10.1016/0022-0248(81)90023-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A systematic study of the electrical properties of Fe-doped InP single crystalsJournal of Materials Science, 1981
- Impurities in single crystal indium phosphideJournal of Materials Science, 1980
- Etch features in Czochralski-grown single crystal indium phosphideJournal of Materials Science, 1980
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Developments in the weighing method of automatic crystal pullingJournal of Crystal Growth, 1974