PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION

1 September 1969

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 15 (5) , 129-131
https://doi.org/10.1063/1.1652935

Abstract

Photoluminescence has been observed from oxygen (O¹⁶) ions implanted into ZnTe. Doses of 5 × 10¹³ oxygen ions/cm² were implanted at room temperature with energies between 50 and 250 keV. After annealing at 300–400°C in zinc vapor, the characteristic photoluminescence spectrum from the oxygen isoelectronic trap was observed. Care was taken to ensure that the spectrum was a direct result of the implanted oxygen by studying unimplanted and neon‐implanted samples. The anticipated isotope shift was observed in the spectrum for samples implanted with O¹⁸.

Keywords

This publication has 4 references indexed in Scilit:

Isoelectronic Oxygen Trap in ZnTe
Physical Review B, 1968
Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe
Physical Review B, 1967
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