The structural nature of multilayers on Si(100) formed by ion-beam sputter deposition

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Abstract
Multilayers on Si(100) were prepared by ion-beam sputter deposition. By using a grazing incidence x-ray reflectivity technique, the layer thickness and interfacial roughness of the multilayers were quantitatively characterized. In particular, the differences in structural features between the on interface and the on interface, as well as the possible inhomogeneity of the layers, were successfully revealed. The x-ray reflectivity results are consistent with the high-resolution electron microscopy observations. The process of the growth of the multilayers is also discussed.