Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride
- 1 November 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (11R)
- https://doi.org/10.1143/jjap.32.4885
Abstract
In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers were also observed. The growth form of the ridged layers depended upon crystal orientation of striped mask patterns, off-angle of vicinal (100) substrates and step-flow velocity. Step-flow velocity in the [011] direction was 1.6 times higher than that in the [01?1] direction; as a result, long ridged layers were formed along the [011] direction.Keywords
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