Crescent InGaAsP mesa substrate buried-heterostructure lasers at 1.55 μm

13 September 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (19) , 795-796
https://doi.org/10.1049/el:19840541

Abstract

Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50–70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T₀ = 70°C, which is higher than normally seen in 1.55 μm lasers.

Keywords

SEMICONDUCTOR LASERS
III-V SEMICONDUCTORS
BH LASERS
TEMPERATURE DEPENDENCE
OPTICAL COMMUNICATION LASERS
LINEAR LIGHT/CURRENT CHARACTERISTICS
THRESHOLD CURRENT
INGAASP MESA SUBSTRATE BURIED-HETEROSTRUCTURE LASERS
MESA SUBSTRATES
SINGLE LIQUID-PHASE-EPITAXIAL GROWTH STEP
INVERTED BURIED-CRESCENT ACTIVE LAYER
OUTPUT POWER
WAVELENGTH 1.55 MICRON

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