Growth of Halide Scintillators with a Modified Heat Exchange Method
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
To test the potential of the heat exchange method for growing scintillator crystals, ingots of mono-, bi- and trivalent halides were prepared. Except for monovalent halides, the removal of oxygen compounds is indispensable. In the case of CaF2 and BaF2, the purification by reaction with NH4F and a superheating of the melt could be included in the crystal growth process. Clear, monocrystalline ingots of these substances were grown in 4f-heated glassy carbon crucibles without seed crystals. Oxygen-free starting material had to be prepared for the growth of inclusion free CeF3 crystals.Keywords
This publication has 6 references indexed in Scilit:
- Time-resolved luminescence of CeF3 crystals excited by X-ray synchrotron radiationChemical Physics Letters, 1993
- Production of sapphire domes by the growth of near-net-shape single crystalsPublished by SPIE-Intl Soc Optical Eng ,1991
- Properties of the high-density scintillator cerium fluorideIEEE Transactions on Nuclear Science, 1989
- The growth of single crystals of optical materials via the gradient solidification methodJournal of Crystal Growth, 1987
- Growth of Ni-doped MgF2 crystals in self-sealing graphite cruciblesJournal of Crystal Growth, 1977
- Crystal growth of flourides in the lanthanide seriesJournal of Crystal Growth, 1968