Photoemission study and band alignment of the CuInSe2(001)/CdS heterojunction
- 19 April 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (16) , 3067-3069
- https://doi.org/10.1063/1.1712034
Abstract
The contact formation of thin-filmepitaxial CuInSe 2 (001) with a physical-vapor-deposited CdS layer is presented in this work. Synchrotron-excited photoelectron spectroscopy was used for this investigation. The epitaxial CuInSe 2 films contain a surface layer of reduced Cu stoichiometry similar to the ordered defect compound CuIn 3 Se 5 . A valence band offset of 0.79±0.15 eV has been determined for this heterojunction. The comparison to literature data indicates that neither surface orientation nor surfacecopper content have a major impact on the valence band offset of CuIn 3 Se 5 , respectively, CuInSe 2 with CdS.Keywords
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