Stress Relaxation in Al-Si-Cu Thin Films and Lines
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Substrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.Keywords
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