Simple mathematical model of shift of threshold voltage induced in an m.o.s. transistor by testing at elevated temperatures
- 1 January 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Proceedings of the Institution of Electrical Engineers
- Vol. 119 (12) , 1683-1686
- https://doi.org/10.1049/piee.1972.0335
Abstract
Tests of a simple m.o.s. integrated circuit at elevated temperatures have previously exposed substantial negative shifts of threshold voltage in those transistors operated at a negative gate voltage. Some of the results presented in an earlier paper are now reprocessed to yield a simple mathematical model of the shift observed on one of the transistors. The model provides an improved basis for the prediction of long-term trends under the stresses of normal service life.Keywords
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