Optical measurements of Landau level density of states and coulomb gaps under FQHE in Si MOSFET
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 196 (1-3) , 196-208
- https://doi.org/10.1016/0039-6028(88)90685-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Localization in a strong magnetic field and the quantized Hall effectSurface Science, 1986
- Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron SystemsPhysical Review Letters, 1985
- Direct measurement of the density of states of a two-dimensional electron gasPhysical Review B, 1985
- Specific Heat of Two-Dimensional Electrons in GaAs-GaAlAs MultilayersPhysical Review Letters, 1985
- Primitive and composite ground states in the fractional quantum hall effectSurface Science, 1984
- Anomalous Quantum Hall Effect: An Incompressible Quantum Fluid with Fractionally Charged ExcitationsPhysical Review Letters, 1983
- Electron Localization in a Two-Dimensional System in Strong Magnetic Fields. I. Case of Short-Range ScatterersJournal of the Physics Society Japan, 1983
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982