Pseudomorphic step-doped channels field-effect transistor(SDCFET)
- 18 July 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (15) , 1418-1419
- https://doi.org/10.1049/el:19960947
Abstract
A new high performance field-effect transistor using step-doped n-In0.15Ga0.85As channels was fabricated and demonstrated. For a 1 × 100 µm2 device, a high gate breakdown voltage of 15 V, a maximum drain saturation current of 735 mA/mm, a maximum transconductance of 200 mS/mm, and a wide gate voltage range > 3 V, with the transconductance > 60 mS/mm, are obtained.Keywords
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