The Measurement of the Temperature Dependence of the Mobility and Effective Lifetime of Minority Carriers in the Base Region of Silicon Transistors

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Abstract
This temperature dependence of the mobility of minority carriers in the base region of two silicon transistors has been determined by a method previously described. The mobility of holes in the n-typo base of a fusion-alloy p-n-p junction transistor was found to vary as T−2·1. The mobility of electrons in the p-type base of a grown-junction it n-p-n transistor was found to vary as 7−2·5. The value of the effective lifetime of the minority carriers was found in both cases to vary as exp (− δE/kt) where δK was 0·055 ev for the holes in the n-type base and 0·065 ev for the electrons in the p-type base.