Application of feedback techniques to the realisation of hybrid and monolithic broadband low-noise-and-power GaAs FET amplifiers
- 15 October 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (21) , 798-799
- https://doi.org/10.1049/el:19810558
Abstract
The implementation of ultrabroadband low-noise GaAs FET amplifiers operating up to 20 GHz is shown to be possible with the use of a low-parasitic high-gm device, which can only be implemented using monolithic circuit techniques. An example of a 0.1 to 6 GHz hybrid low-noise amplifier to illustrate the circuit technique is described.Keywords
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