Hot-electron effects in Silicon-on-insulator n-channel MOSFET's

1 October 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (10) , 2173-2177
https://doi.org/10.1109/t-ed.1987.23213

Abstract

Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET's. The presence of a floating substrate in the SOI devices appears to increase the drain-saturation voltage and, therefore, to reduce the drain electric field. This effect is even further enhanced when thin fully depleted films are considered. Electrical stress measurements and device modeling suggest that hot-electron degradation should be smaller in SOI MOSFET's than in their bulk counterparts.

Keywords

ELECTRONS
SILICON ON INSULATOR
VERY LARGE SCALE INTEGRATION
IMPACT IONIZATION
DEGRADATION
VOLTAGE