A gate drive circuit for silicon carbide JFET
- 8 July 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1162-1166
- https://doi.org/10.1109/iecon.2003.1280217
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A gate driver based soft-switching SiC bipolar junction transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Key power semiconductor device concepts for the next decadePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Wide bandwidth low complexity isolated current sensor to be employed in a 10 kW/500 kHz three-phase unity power factor PWM rectifier systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003