Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfaces

• 1 November 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (6) , 2266-2269
• https://doi.org/10.1116/1.586887

Abstract