Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor

13 February 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (4) , 193-195
https://doi.org/10.1049/el:19860135

Abstract

A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs photoconductor associated with a GaAs FET. The steady state and dynamic gains and the noise properties of the photoconductor and of the integrated circuit have been investigated.

Keywords

GAAS FET
FIBRE OPTIC COMMUNICATIONS
GAAS PHOTOCONDUCTOR
DYNAMIC GAINS
III-V SEMICONDUCTORS
FIELD-EFFECT TRANSISTOR
OPTICAL COMMUNICATION SYSTEMS
STEADY-STATE GAIN
INTEGRATED OPTOELECTRONICS
0.8 MICRON WAVELENGTH
PLANAR MONOLITHIC INTEGRATION
NOISE PROPERTIES
PHOTORECEIVER

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