Many-Body Effects in a Modulation-Doped Semiconductor Quantum Well
- 7 December 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (23) , 2690-2692
- https://doi.org/10.1103/physrevlett.59.2690
Abstract
The electron areal concentration of a one-sided 130-Å-thick GaAs-Ga(Al)As modulation-doped quantum well is continuously varied from 0 to 6.6× by use of a Schottky gate. This allows one to study the precise evolution of the luminescence and excitation spectra with increasing . From a comparison between the measured peak positions and Hartree calculations of the energy levels, a measurement of the band-gap renormalization is obtained.
Keywords
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