X‐ray Monitoring System for in situ Investigation of Thin Film Growth

Abstract
The X‐ray optical system of in situ monitoring of reflectivity measured in the short‐wave range 0.5–3 Å is proposed. Thickness, density, and microroughness of the growing film are determined for every half‐wave of reflectivity oscillations that corresponds to the averaging by the layer of 10 Å thickness. By the example of diamond‐like film growing, the possibility of an analysis of transition processes and technology failure during film growth have been shown.
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