Conditions for stable growth of epitaxial GaP layers by molten salt electrodeposition
- 31 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (5) , 545-552
- https://doi.org/10.1016/0022-0248(78)90297-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The synthesis of GaAs by molten salt electrolysisJournal of Crystal Growth, 1978
- DC resistances in electrolytic crystallization from molten saltsJournal of Crystal Growth, 1976
- Heteroepitaxial growth of GaP on siliconJournal of Crystal Growth, 1975
- Epitaxial Growth of ZnSe on Ge by Fused Salt ElectrolysisJapanese Journal of Applied Physics, 1975
- The Synthesis and Epitaxial Growth of GaP by Fused Salt ElectrolysisJournal of the Electrochemical Society, 1968