Improvement of AlGaAs/AlGaAs interface by in situ low-temperature H2 annealing in metalorganic vapor phase epitaxial regrowth
- 29 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (5) , 641-643
- https://doi.org/10.1063/1.117791
Abstract
A new type of thermal treatment for air‐exposed AlGaAssurfaces,in situ low‐temperature H2annealing, has been developed regrowing AlGaAs in metalorganic vapor phase epitaxy. The quality of regrown interface was evaluated by photoluminescence (PL) spectrum from Al0.3Ga0.7As/GaAs/Al 0.3Ga0.7As quantum wells near the interface of the initial AlGaAs layer. Remarkable recovery of PL intensity was observed by this newly developed process, indicating that initial air‐exposed AlGaAssurface states are reduced.Keywords
This publication has 0 references indexed in Scilit: