The influence of impurities on the electrical properties of TiSe2single crystals
- 30 May 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (15) , 2901-2912
- https://doi.org/10.1088/0022-3719/13/15/014
Abstract
The electrical properties of TiSe2 single crystals doped with several impurities have been investigated as a function of the concentration. The electrical resistivity at low temperature is distinctly affected by Nb, Cr and Ni in connection with a localisation of carriers and of complex scattering mechanisms. Crystals of the Ti1-xNbxSe2 system have been grown for the whole range of concentration x. They present properties typical for the 1T and 2H phases. Substituted impurities like Sc and Y appear to behave as acceptors and impurities like Re or Cu as donors.Keywords
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