Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO 2 films
- 25 May 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (11) , 689-691
- https://doi.org/10.1049/el:19890466
Abstract
High-quality oxynitride gate dielectrics have been fabricated by rapid thermal processing of LPCVD SiO2 in reactive ambients (NH3 and O2). The as-deposited CVD oxides of 200 Á in thickness show no early breakdowns. The breakdown distribution becomes tighter, the interface state density is reduced, and the interface endurance property is improved after rapid thermal nitridation and reoxidation.Keywords
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