Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus
- 3 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (16) , 1077-1079
- https://doi.org/10.1049/el:19890721
Abstract
In this letter, we report that by using rapid thermal annealing (RTA) and the coimplantation of phosphorus, the outdiffusion of beryllium atoms has been prevented. We have observed that the reverse annealing behaviour of the Beimplanted samples has been modified after the coimplantation of phosphorus.Keywords
This publication has 1 reference indexed in Scilit:
- Optical Furnace AnnealingMRS Proceedings, 1984